PHOTOCONDUCTIVE GAIN GREATER THAN UNITY IN CDSE FILMS WITH SCHOTTKY BARRIERS AT CONTACTS

被引：44

作者：

MEHTA, RR ^{[1
]}

SHARMA, BS ^{[1
]}

机构：

[1] IBM CORP, GEN PROD DIV, SAN JOSE, CA 95114 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 01期

关键词：

D O I：

10.1063/1.1661881

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：325 / 328

页数：4

共 22 条

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[10] STRAIN-BIASED FERROELECTRIC-PHOTOCONDUCTOR IMAGE STORAGE AND DISPLAY DEVICES [J].

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