INCORPORATION OF SN INTO EPITAXIAL GAAS GROWN FROM LIQUID-PHASE

被引:20
作者
KUPHAL, E
SCHLACHETZKI, A
POCKER, A
机构
来源
APPLIED PHYSICS | 1978年 / 17卷 / 01期
关键词
D O I
10.1007/BF00885032
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:63 / 72
页数:10
相关论文
共 30 条
[1]  
EHRET R, 1974, 18TBR6 RES I GERM PO
[2]  
GROBE E, 1972, Z ANGEW PHYSIK, V32, P381
[3]   HOMOGENEOUS SOLUTION GROWN EPITAXIAL GAAS BY TIN DOPING [J].
HARRIS, JS ;
SNYDER, WL .
SOLID-STATE ELECTRONICS, 1969, 12 (05) :337-+
[4]  
HSIEH JJ, 1974, J CRYST GROWTH, V27, P49, DOI 10.1016/0022-0248(74)90418-7
[5]  
Hubner K., 1974, Kristall und Technik, V9, P865, DOI 10.1002/crat.19740090803
[6]   IMPURITY CONDUCTION AND MAGNETORESISTANCE IN LIGHTLY DOPED N-TYPE GAAS [J].
KAHLERT, H ;
LANDWEHR, G ;
SCHLACHETZKI, A ;
SALOW, H .
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1976, 24 (04) :361-365
[7]   EFFECT OF GROWTH-RATE AND TEMPERATURE ON INCORPORATION OF SN IN GAAS DURING LPE [J].
KONIG, U .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (09) :1414-1420
[8]   GALLIUM-ARSENIDE AND (ALGA) AS DEVICES PREPARED BY LIQUID-PHASE EPITAXY (REVIEW ARTICLE) [J].
KRESSEL, H .
JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (04) :747-790
[9]  
KUPHAL E, 1977, 65TBR11 RES I GERM P
[10]  
KUPHAL E, UNPUBLISHED