INSITU RHEED MONITORING OF HYDROGEN PLASMA CLEANING ON SEMICONDUCTOR SURFACES

被引:28
作者
KISHIMOTO, A
SUEMUNE, I
HAMAOKA, K
KOUI, T
HONDA, Y
YAMANISHI, M
机构
[1] Hiroshima University, Higashihiroshima
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 10期
关键词
Hydrogen plasma; In-situ monitoring; Semiconductor surface; Surface cleaning; Surface reconstruction;
D O I
10.1143/JJAP.29.2273
中图分类号
O59 [应用物理学];
学科分类号
摘要
The first trial of in-situ reflection high-energy electron diffraction (RHEED) monitoring of cleaning processes on semiconductor surfaces with hydrogen (H) plasma was performed. The cleaning time on (100) GaAs surfaces decreased for the higher temperature, while that on (100) Si surfaces increased for the higher temperature. This opposite tendency in the temperature dependence was studied with the measured temperature dependence of the etch rate and the in-situ quadrupole mass spectroscopy. The dependence of the Si surface reconstruction on the angle of incidence of the H-plasma beam is also reported for the first time. © 1990 IOP Publishing Ltd.
引用
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页码:2273 / 2276
页数:4
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