APPROACHES TO HIGH-PERFORMANCE SITL

被引：10

作者：

NISHIZAWA, J ^{[1
]}

NONAKA, T ^{[1
]}

MOCHIDA, Y ^{[1
]}

OHMI, T ^{[1
]}

机构：

[1] NIPPON GAKKI CO LTD,HAMAMATSU,JAPAN

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1979年 / 14卷 / 05期

关键词：

D O I：

10.1109/JSSC.1979.1051288

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to improve speed performanee, the normally configured bipolar mode SIT (BSIT) is introduced to SITL with a new circuit Configuration where output Schottky diodes are fabricated to ensure the decoupling between multiple outputs. The performance of this Schottky SITL is evaluated in the ring oscillator having three fanouts for each stage, where the propagation delay is obtained as 2.5 ns with a power dissipation of 100 μW. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：873 / 875

页数：3

共 15 条

[1] CHARACTERISTICS OF STATIC INDUCTION TRANSISTORS - EFFECTS OF SERIES RESISTANCE
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[8] NISHIZAWA J, UNPUBLISHED
[9] NISHIZAWA J, 1979 P INT C SOL STA
[10] HIGH-FREQUENCY HIGH-POWER STATIC INDUCTION TRANSISTOR
NISHIZAWA, JI
YAMAMOTO, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (03) : 314 - 322

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