ELECTRICAL CHARACTERISTICS OF AU-PBPC-AU THIN-FILM SANDWICH DEVICES ON EXPOSURE TO O-2 AND CO(2)

被引：2

作者：

COLLINS, RA ^{[1
]}

ABASS, AK ^{[1
]}

PFEIFFER, M ^{[1
]}

机构：

[1] TECH UNIV DRESDEN,FAK NAT WISSENSCH & MATH,INST ANGEW PHOTOPHYS,O-8027 DRESDEN,GERMANY

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1994年 / 76卷 / 05期

关键词：

D O I：

10.1080/00207219408925978

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The semiconducting characteristics of Au-PbPc-Au thin film sandwich devices were studied as a function of exposure to oxygen (in the form of air) and chlorine. Both O2 and Cl2 were found to generate acceptor levels within the PbPc bandgap. Both ohmic and space charge-limited conduction were observed. The experimental data were analysed within the framework of the model of Schmidlin and Roberts. Devices exposed to air for extended periods showed Schottky behaviour. The width of the Schottky barrier was estimated as 60 nm, the barrier height 1.5 eV and the rectifying ratio at +/-1 V was 200. The Schottky barrier disappeared after vacuum annealing at 423 K.

引用

页码：787 / 791

页数：5

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