DETERMINATION OF FLAT-BAND POTENTIAL OF A SEMICONDUCTOR IN CONTACT WITH A METAL OR AN ELECTROLYTE FROM MOTT-SCHOTTKY PLOT

被引：358

作者：

CARDON, F ^{[1
]}

GOMES, WP ^{[1
]}

机构：

[1] STATE UNIV GHENT,FYS SCHEIKUNDE LAB,B-9000 GHENT,BELGIUM

来源：

关键词：

D O I：

10.1088/0022-3727/11/4/003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L63 / L67

页数：5

共 17 条

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[3] ELECTROCHEMICAL PROPERTIES OF SEMICONDUCTING TIO2 (RUTILE) SINGLE-CRYSTAL ELECTRODE
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[4] INVESTIGATION ON FREQUENCY-DEPENDENCE OF IMPEDANCE OF NEARLY IDEALLY POLARIZABLE SEMICONDUCTOR ELECTRODES CDSE, CDS AND TIO2
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VANMEIRHAEGHE, RL
CARDON, F
GOMES, WP
[J]. BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1975, 79 (12): : 1206 - 1213
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[7] FREQUENCY-DEPENDENCE OF IMPEDANCE OF N-TYPE AND P-TYPE GALLIUM-ARSENIDE ELECTRODES
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VANMEIRHAEGHE, RL
CARDON, F
GOMES, WP
[J]. SURFACE SCIENCE, 1976, 59 (02) : 401 - 412
[8] DIFFERENTIAL CAPACITANCE OF N-TYPE AND P-TYPE GALLIUM-ARSENIDE ELECTRODE
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GOMES, WP
[J]. SURFACE SCIENCE, 1974, 44 (02) : 541 - 552
[9] LAFLERE WH, SURFACE SCI
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