SPECIFIC RESISTANCE OF N+-N JUNCTION

[1] BARANOV LI, 1968, RADIO ENG ELECTRON P, V13, P1245

[2] Davis E.M., 1958, J ELECTRON CONTR, V4, P17

[3] HENISCH HK, 1949, METAL RECTIFIERS, P90

[4] LADE RW, 1963, IEEE T ELECTRON DEVI, VED10, P268

[5] RICHMAN D, 1967, ELECTRONICS, P108

[6] SIMPSON JH, 1962, JUNCTION TRANSISTORS, P44

[7] RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K [J]. SOLID-STATE ELECTRONICS, 1968, 11 (06) : 599 - &

[8] VANRUYVEN LJ, 1964, THESIS TH EINDHOVEN

[1] BARANOV LI, 1968, RADIO ENG ELECTRON P, V13, P1245

[2] Davis E.M., 1958, J ELECTRON CONTR, V4, P17

[3] HENISCH HK, 1949, METAL RECTIFIERS, P90

[4] LADE RW, 1963, IEEE T ELECTRON DEVI, VED10, P268

[5] RICHMAN D, 1967, ELECTRONICS, P108

[6] SIMPSON JH, 1962, JUNCTION TRANSISTORS, P44

[7] RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K [J]. SOLID-STATE ELECTRONICS, 1968, 11 (06) : 599 - &

[8] VANRUYVEN LJ, 1964, THESIS TH EINDHOVEN