DISLOCATION MOVEMENT AT ANNEALED SCRATCHES ON NEAR (111) SILICON

被引：6

作者：

PUTTICK, KE

SHAHID, MA

机构：

[1] Physics Department, University of Surrey, Guildford

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 54卷 / 02期

关键词：

D O I：

10.1002/pssa.2210540247

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：K95 / &

共 4 条

[1] SCRATCHES ON NEAR (111)SILICON SLICES [J].

BADRICK, AST ;

ELDEGHAIDY, F ;

PUTTICK, KE ;

SHAHID, MA .

[2]

BADRICK AST, 1979, J PHYS D, V12

[3] A STUDY OF STRAINS IN ABRADED DIAMOND SURFACES [J].

FRANK, FC ;

LAWN, BR ;

LANG, AR ;

WILKS, EM .

[4]

Gerward L., 1970, Physica Status Solidi A, V2, P797, DOI 10.1002/pssa.19700020416