RADIATIVE LIFETIME IN SEMICONDUCTORS FOR INFRARED DETECTION

被引：82

作者：

HUMPHREYS, RG

机构：

来源：

INFRARED PHYSICS | 1986年 / 26卷 / 06期

关键词：

D O I：

10.1016/0020-0891(86)90054-0

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：337 / 342

页数：6

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[2]

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[3]

ELLIOTT CT, 1985, ELECTRON LETT, V21, P451

[4] RADIATIVE LIFETIME IN SEMICONDUCTORS FOR INFRARED DETECTION [J].

HUMPHREYS, RG .

INFRARED PHYSICS, 1983, 23 (03) :171-175

[5]

MALYUTENKO VK, 1984, SOV PHYS SEMICOND+, V18, P211

[6]

STERN F, 1963, SOLID STATE PHYS, V15, P299

VANROOSBROECK, W ;

SHOCKLEY, W .

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