DESIGN CONSIDERATIONS OF HYPERABRUPT VARACTOR DIODES

被引:19
作者
KANNAM, PJ
PONCZAK, S
OLMSTEAD, JA
机构
关键词
D O I
10.1109/T-ED.1971.17158
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:109 / +
页数:1
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共 15 条
[1]  
BHOLA SR, 1963, RCA REV, V24, P511
[2]   CHARACTERISTICS OF DIFFUSED P-N JUNCTIONS IN EPITAXIAL LAYERS [J].
BREITSCHWERDT, KG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (01) :13-+
[3]   CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J].
CAUGHEY, DM ;
THOMAS, RE .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12) :2192-+
[4]   A TECHNIQUE FOR DIRECTLY PLOTTING INVERSE DOPING PROFILE OF SEMICONDUCTOR WAFERS [J].
COPELAND, JA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) :445-&
[5]  
Giacoletto L. J., 1957, IRE T ELECTRON DEV, V4, P207
[6]  
GOLDSMITH N, 1967, RCA REV, V28, P344
[8]   IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J].
LEE, CA ;
KLEIMACK, JJ ;
BATDORF, RL ;
WIEGMANN, W ;
LOGAN, RA .
PHYSICAL REVIEW, 1964, 134 (3A) :A761-+
[10]   BEAM-LEAD DEVICES AND INTEGRATED CIRCUITS [J].
LEPSELTER, MP ;
WAGGENER, HA ;
MACDONALD, RW ;
DAVIS, RE .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (04) :405-+