OPTIMIZED DEPTH RESOLUTION IN ION-SPUTTERED AND LAPPED COMPOSITIONAL PROFILES WITH AUGER-ELECTRON SPECTROSCOPY

被引:42
作者
LEA, C
SEAH, MP
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D O I
10.1016/0040-6090(81)90393-X
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T [工业技术];
学科分类号
08 ;
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页码:67 / 86
页数:20
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共 37 条
[1]   ELECTRON-BEAM EFFECTS IN DEPTH PROFILING MEASUREMENTS WITH AUGER-ELECTRON SPECTROSCOPY [J].
AHN, J ;
PERLEBERG, CR ;
WILCOX, DL ;
COBURN, JW ;
WINTERS, HF .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (10) :4581-4583
[2]   DEPTH RESOLUTION OF SPUTTER PROFILING [J].
ANDERSEN, HH .
APPLIED PHYSICS, 1979, 18 (02) :131-140
[3]  
ARNOLD JB, 1977, OPT ENG, V16, P324
[4]   POLISHING SINGLE-POINT DIAMOND-TURNED METAL REFLECTIVE OPTICS [J].
BAKER, PC ;
BROWN, NJ .
OPTICAL ENGINEERING, 1978, 17 (06) :595-601
[5]  
BARNES WP, 1975, SPIE J, V65, P3
[6]   ANALYSIS OF MONOMOLECULAR LAYERS OF SOLIDS BY SECONDARY ION EMISSION [J].
BENNINGHOVEN, A .
ZEITSCHRIFT FUR PHYSIK, 1970, 230 (05) :403-+
[7]   GROWTH OF TOPOGRAPHY DURING SPUTTERING OF AMORPHOUS SOLIDS .4. GENERALIZED THEORY [J].
CARTER, G ;
COLLIGON, JS ;
NOBES, MJ .
JOURNAL OF MATERIALS SCIENCE, 1973, 8 (10) :1473-1481
[8]  
DOBROTT RD, 1975, J ELECTROCHEM SOC, V122, pC249
[9]  
GERTH HL, 1976, SPIE J, V93, P46
[10]  
Happ WW, 1956, B AM PHYS SOC, V1, P382