IRRADIATION-PRODUCED BAND-TAILING IN SEMICONDUCTORS

被引：16

作者：

KALMA, AH ^{[1
]}

机构：

[1] INTELCOM RAD TECH,SAN DIEGO,CA 92100

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1973年 / NS20卷 / 06期

关键词：

D O I：

10.1109/TNS.1973.4327398

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：224 / 228

页数：5

共 14 条

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GRAFT, RD ;

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SHILLIDAY, TS .

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[2]

AUKERMAN LW, 1968, SEMICONDUCT SEMIMET, V4, pCH6

[3] INFRARED ABSORPTION IN NEUTRON-IRRADIATED GAAS [J].

BURKIG, VC ;

MCNICHOLS, JL ;

GINELL, WS .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3268-+

[4] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J].

CHENG, LJ ;

CORELLI, JC ;

CORBETT, JW ;

WATKINS, GD .

PHYSICAL REVIEW, 1966, 152 (02) :761-+

[5]

CHENG LJ, PRIVATE COMMUNICATIO

[6]

EISEN FH, 1971, RADIATION EFFECTS SE

[7]

KALMA AH, 1973, B AM PHYS SOC, V18, P389

[8]

KALMA AH, 1972, IEEE NUCL S, VNS19, P209

[9]

KALMA AH, 1972, RADIATION DAMAGE DEF

[10] THEORY OF ANOMALOUS INFRARED ATTENUATION IN NEUTRON-IRRADIATED COMPOUND SEMICONDUCTORS [J].

MCNICHOLS, JL ;

GINELL, WS .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) :656-+

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