THERMAL RELAXATION OF THE ELECTRIC-CONDUCTIVITY IN AMORPHOUS SILICON-GERMANIUM ALLOYS

被引：9

作者：

LIU, JZ

CHU, V

SHEN, DS

SLOBODIN, D

WAGNER, S

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.40.6424

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6424 / 6427

页数：4

共 11 条

[1]

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[3]

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ARYA, RR ;

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[5]

SMITH ZE, 1987, AIP C P, V157, P171

[6] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI [J].

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[7]

STAFFORD BL, 1987, AIP C P, V157

[8] THERMAL-EQUILIBRIUM PROCESSES IN AMORPHOUS-SILICON [J].

STREET, RA ;

KAKALIOS, J ;

TSAI, CC ;

HAYES, TM .

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[9]

TAYLOR PC, 1984, AIP C P, V120

[10]

WAGNER S, 1988, MATER RES SOC S P, V118, P623

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