THERMAL-EQUILIBRIUM DEFECT PROCESSES IN HYDROGENATED AMORPHOUS-SILICON

被引：123

作者：

SMITH, ZE

ALJISHI, S

SLOBODIN, D

CHU, V

WAGNER, S

LENAHAN, PM

ARYA, RR

BENNETT, MS

机构：

[1] PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIVERSITY PK,PA 16802

[2] SOLAREX THIN FILMS DIV,NEWTOWN,PA 18940

来源：

关键词：

D O I：

10.1103/PhysRevLett.57.2450

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2450 / 2453

页数：4

共 24 条

[1] AST DG, 1979, I PHYS C SER, V43, P1159
[2] STRUCTURE AND ELECTRONIC STATES IN DISORDERED-SYSTEMS
BARYAM, Y
ADLER, D
JOANNOPOULOS, JD
[J]. PHYSICAL REVIEW LETTERS, 1986, 57 (04) : 467 - 470
[3] BRANZ HM, 1986, 18TH IEEE PHOT SPEC, P513
[4] CATALANO A, 1982, 16TH P IEEE PHOT SPE, P1421
[5] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY
JACKSON, WB
AMER, NM
[J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5559 - 5562
[6] KIDA H, 1984, 1ST P PHOT SCI ENG C, P417
[7] KRUHLER W, 1984, 1ST INT PHOT SCI ENG, P127
[8] OBSERVATION OF A REVERSIBLE FIELD-INDUCED DOPING EFFECT IN HYDROGENATED AMORPHOUS-SILICON
LANG, DV
COHEN, JD
HARBISON, JP
[J]. PHYSICAL REVIEW LETTERS, 1982, 48 (06) : 421 - 424
[9] A CHEMICAL-BOND APPROACH TO DOPING, COMPENSATION AND PHOTOINDUCED DEGRADATION IN AMORPHOUS-SILICON
MULLER, G
KALBITZER, S
MANNSPERGER, H
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 39 (04): : 243 - 250
[10] DIFFERENTIAL SURFACE PHOTOVOLTAGE MEASUREMENT OF MINORITY-CARRIER DIFFUSION LENGTH IN THIN-FILMS
SCHWARZ, R
SLOBODIN, D
WAGNER, S
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (07) : 740 - 742