DIFFERENTIAL SURFACE PHOTOVOLTAGE MEASUREMENT OF MINORITY-CARRIER DIFFUSION LENGTH IN THIN-FILMS

被引:18
作者
SCHWARZ, R
SLOBODIN, D
WAGNER, S
机构
关键词
D O I
10.1063/1.96023
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:740 / 742
页数:3
相关论文
共 9 条
[1]  
CHIANG CL, 1985, IEEE T ELECTRON DEVI, V32
[2]   DIFFUSION LENGTH OF HOLES IN A-SI-H BY THE SURFACE PHOTO-VOLTAGE METHOD [J].
DRESNER, J ;
SZOSTAK, DJ ;
GOLDSTEIN, B .
APPLIED PHYSICS LETTERS, 1981, 38 (12) :998-999
[4]  
GOODMAN AM, 1979, ANN BOOK ASTM STA 43, P773
[5]   MINORITY-CARRIER DIFFUSION LENGTHS IN AMORPHOUS SILICON-BASED ALLOYS [J].
HACK, M ;
MCGILL, J ;
CZUBATYJ, W ;
SINGH, R ;
SHUR, M ;
MADAN, A .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6270-6275
[6]   DETERMINATION OF MINORITY-CARRIER DIFFUSION LENGTH IN INDIUM-PHOSPHIDE BY SURFACE PHOTOVOLTAGE MEASUREMENT [J].
LI, SS .
APPLIED PHYSICS LETTERS, 1976, 29 (02) :126-127
[8]   INTENSITY DEPENDENCE OF DIFFUSION LENGTH IN AMORPHOUS-SILICON BY SURFACE PHOTOVOLTAGE MEASUREMENTS [J].
MOORE, AR ;
KANE, DE .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2796-2802
[9]  
MOORE AR, 1984, SEMICONDUCTORS SEM C, V21, pCH7