INTENSITY DEPENDENCE OF DIFFUSION LENGTH IN AMORPHOUS-SILICON BY SURFACE PHOTOVOLTAGE MEASUREMENTS

被引：10

作者：

MOORE, AR

KANE, DE

机构：

[1] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305

[2] RCA LABS,PRINCETON,NJ 08540

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 10期

关键词：

D O I：

10.1063/1.333812

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2796 / 2802

页数：7

共 12 条

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[7] THEORY AND EXPERIMENT ON THE SURFACE-PHOTOVOLTAGE DIFFUSION-LENGTH MEASUREMENT AS APPLIED TO AMORPHOUS-SILICON [J].

MOORE, AR .

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[8] COLLECTION LENGTH OF HOLES IN A-SI-H BY SURFACE PHOTO-VOLTAGE USING A LIQUID SCHOTTKY-BARRIER [J].

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[9] PROPERTIES OF AMORPHOUS HYDROGENATED SILICON, WITH SPECIAL EMPHASIS ON PREPARATION BY SPUTTERING [J].

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