DARK CONDUCTIVITY AND PHOTOCONDUCTIVITY OF COMPENSATED ALPHA-SI-H

被引：13

作者：

HOHEISEL, B

FISCHER, R

STUKE, J

机构：

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期

关键词：

D O I：

10.1051/jphyscol:19814180

中图分类号：

学科分类号：

摘要：

引用

页码：819 / 822

页数：4

共 7 条

[1] PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON [J].

ANDERSON, DA ;

SPEAR, WE .

PHILOSOPHICAL MAGAZINE, 1977, 36 (03) :695-712

[2] INTERSTITIAL DOPING OF AMORPHOUS SILICON [J].

BEYER, W ;

FISCHER, R .

[3] THERMALIZATION AND RECOMBINATION OF EXCESS CARRIERS IN A-SI-H [J].

FISCHER, R ;

REHM, W ;

STUKE, J ;

VOGETGROTE, U .

[4] DRIFT MOBILITY AND PHOTOCONDUCTIVITY IN AMORPHOUS SILICON [J].

FUHS, W ;

MILLEVILLE, M ;

STUKE, J .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (02) :495-502

[5] ELECTRON AND HOLE DRIFT MOBILITY IN AMORPHOUS SILICON [J].

MOORE, AR .

[6]

ROSE H, 1963, CONCEPTS PHOTOCONDUC

WRONSKI, CR ;

DANIEL, RE .

PHYSICAL REVIEW B, 1981, 23 (02) :794-804