DEPENDENCE OF CD DIFFUSION AND ELECTRICAL CONDUCTIVITY IN CDS ON CD PARTIAL PRESSURE AND TEMPERATURE

被引：25

作者：

SHAW, D

WHELAN, RC

机构：

[1] Physics Department, Hull

[2] Metallurgy Department, University College, Cardiff

来源：

PHYSICA STATUS SOLIDI | 1969年 / 36卷 / 02期

关键词：

D O I：

10.1002/pssb.19690360234

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The diffusion coefficient of Cd in undoped single crystal CdS has been measured at 850 °C as a function of Cd pressure, pCd, by a radiotracer method. The electrical conductivity of similar CdS samples has also been measured as a function of pCd in the temperature range 660 to 950 °C. It is concluded that the defects V″Cd and Cd ix are responsible for Cd diffusion at 850 °C and that a satisfactory account of the results can be given in terms of Cd interstitials and vacancies plus a residual shallow foreign donor. A model for the defect structure in CdS at 850 °C is presented in terms of Cd vacancies and interstitials. Copyright © 1969 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：705 / &

共 31 条

[11] DIFFUSION OF SILVER IN SILVER BROMIDE AND EVIDENCE FOR INTERSTITIALCY MIGRATION [J].