BACKSCATTERING AND CHANNELING STUDY OF LEAD INCLUSIONS IN PB-IMPLANTED ALUMINUM

被引：6

作者：

BOURDELLE, KK ^{[1
]}

ANDERSEN, HH ^{[1
]}

JOHANSEN, A ^{[1
]}

JOHNSON, E ^{[1
]}

SARHOLTKRISTENSEN, L ^{[1
]}

STEENSTRUP, S ^{[1
]}

YU, L ^{[1
]}

NIELSEN, BB ^{[1
]}

机构：

[1] AARHUS UNIV,INST PHYS,DK-8000 AARHUS,DENMARK

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 64卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(92)95454-Y

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The behaviour of Pb atoms in Al was studied by RBS/channeling on Al specimens implanted at room temperature with 150 keV Pb+ ions to fluences in the range from 1 x 10(15) to 2.4 x 10(16) Pb/cm2. In the as-implanted samples the lead signal showed weak channeling for 500 keV He+ ions. The signal improved with increasing lead fluence. The angular width of the <110> channeling dip for Pb was observed to be substantially wider than for Al. This is ascribed to the formation of incoherent lead precipitates aligned topotactically with the aluminium matrix. A drastic improvement of the channeling in lead takes place after annealing at temperatures from 380 to 480-degrees-C. This is thought to be due to growth of the precipitates through merging of smaller clusters and acquisition of individual lead atoms from the supersaturated solution. These processes are accompanied by a simultaneous recovery of the aluminium matrix. The channeling dip in the lead precipitates was found to have a pronounced dependence upon the energy of the analyzing He+ beam.

引用

页码：143 / 148

页数：6

共 19 条

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