THEORY OF FIELD-EMISSION FROM P-TYPE SEMICONDUCTORS

被引：11

作者：

BASKIN, LM ^{[1
]}

LVOV, OI ^{[1
]}

FURSEY, GN ^{[1
]}

机构：

[1] AA ZHDANOV STATE UNIV,INST MATH & MECH,LENINGRAD,USSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 42卷 / 02期

关键词：

D O I：

10.1002/pssa.2210420242

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：757 / 767

页数：11

共 9 条

[1] PHOTOSENSITIVE FIELD EMISSION FROM P-TYPE GERMNIUM [J].

ARTHUR, JR .

[2] GENERAL FEATURES OF FIELD EMISSION FROM SEMICONDUCTORS [J].

BASKIN, LM ;

LVOV, OI ;

FURSEY, GN .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 47 (01) :49-&

[3]

BUT ZP, 1972, UKR FIZ ZH, V17, P949

FISCHER, R .

PHYSICA STATUS SOLIDI, 1966, 13 (01) :K5-&

[5]

FISHER R, 1971, FIELD EMISSION SEMIC

[6]

GORKOV VA, 1962, RADIOTEKH ELEKTRON, V7, P1501

[7]

Lampert M.A., 1970, CURRENT INJECTION SO

[8] THEORY OF FIELD EMISSION FROM SEMICONDUCTORS [J].

STRATTON, R .

PHYSICAL REVIEW, 1962, 125 (01) :67-&

[9]

Yatsenko A. F., 1970, Physica Status Solidi A, V1, P333, DOI 10.1002/pssa.19700010218