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ANOMALOUS INDUCTIVE EFFECT IN SCHOTTKY JUNCTIONS

被引：2
作者：
CLARK, WR
CHAMPNESS, CH
机构：
来源：
CANADIAN JOURNAL OF PHYSICS | 1991年 / 69卷 / 3-4期
关键词：
D O I：
10.1139/p91-052
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
It has been known for some time in pn junctions and Schottky junctions that inductance can arise at low frequency in high-level injection owing to conductivity modulation and the transit time of injected carriers. Several observations of this type of inductive behaviour have been reported. In the present work, an inductive effect was observed in forward-biased selenium-thallium contacts at frequencies generally below 1 kHz. The effect was found to vary with storage time and may arise from the formation of semiconducting TISe between the selenium and the thallium.
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页码：311 / 316
页数：6
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