A STUDY ON ELECTRONIC CURRENTS IN THE TA-TA2O5-ELECTROLYTE SYSTEM

被引:1
作者
SEREGINA, EM
ROZENBERG, LA
BOCHAROVA, VI
ZEGZHDA, PP
机构
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1991年 / 124卷 / 02期
关键词
D O I
10.1002/pssa.2211240215
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The process of carrier transport through anodized oxide films on tantalum is investigated. The forming voltage, which is the main process variable, is found to determine the carrier transport mechanism at low phosphoric acid concentrations. The Schottky barrier mechanism is evident in the case of higher forming voltages whereas the percolation mechanism is suggested for lower forming voltages. Barrier heights are obtained according to the electrolyte compositions.
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页码:499 / 504
页数:6
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