COMPLEX NATURE OF COPPER ACCEPTOR IN GALLIUM ARSENIDE

[1] Bebb H. B., 1969, Solid State Communications, V7, P5

[2] APPLICATION OF QUANTUM-DEFECT METHOD TO OPTICAL TRANSITIONS INVOLVING DEEP EFFECTIVE-MASS-LIKE IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1969, 185 (03): : 1116 - &

[3] BEBB HB, 1969, 3 P INT C PHOT STANF

[4] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P139

[5] BLATTE M, 1970, THESIS U FRANKFURT M

[6] BRODOVOI VA, 1971, SOV PHYS SEMICOND+, V4, P1770

[7] PHOTOEXCITATION AND PHOTOIONIZATION OF NEUTRAL MANGANESE ACCEPTORS IN GALLIUM ARSENIDE [J]. PHYSICAL REVIEW LETTERS, 1967, 18 (12) : 443 - +

[8] HALL-EFFECT LEVELS PRODUCED IN TE-DOPED GAAS CRYSTALS BY CU DIFFUSION [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) : 2873 - +

[9] INTRINSIC DIFFUSION OF BORON AND PHOSPHORUS IN SILICON FREE FROM SURFACE EFFECTS [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02): : 389 - +

[10] GHOSHTAGORE RN, 1971, PHYS REV B, V3, P379

[1] Bebb H. B., 1969, Solid State Communications, V7, P5

[2] APPLICATION OF QUANTUM-DEFECT METHOD TO OPTICAL TRANSITIONS INVOLVING DEEP EFFECTIVE-MASS-LIKE IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1969, 185 (03): : 1116 - &

[3] BEBB HB, 1969, 3 P INT C PHOT STANF

[4] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P139

[5] BLATTE M, 1970, THESIS U FRANKFURT M

[6] BRODOVOI VA, 1971, SOV PHYS SEMICOND+, V4, P1770

[7] PHOTOEXCITATION AND PHOTOIONIZATION OF NEUTRAL MANGANESE ACCEPTORS IN GALLIUM ARSENIDE [J]. PHYSICAL REVIEW LETTERS, 1967, 18 (12) : 443 - +

[8] HALL-EFFECT LEVELS PRODUCED IN TE-DOPED GAAS CRYSTALS BY CU DIFFUSION [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) : 2873 - +

[9] INTRINSIC DIFFUSION OF BORON AND PHOSPHORUS IN SILICON FREE FROM SURFACE EFFECTS [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02): : 389 - +

[10] GHOSHTAGORE RN, 1971, PHYS REV B, V3, P379