DEFECTS IN A-SIO2 DEPOSITED FROM A TETRAETHOXYSILANE-OXYGEN PLASMA

被引：8

作者：

DEVINE, RAB

TISSIER, A

机构：

[1] Centre National d'Etudes des Télécommunications, 38243 Meylan

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 04期

关键词：

D O I：

10.1063/1.348685

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied intrinsic and extrinsic paramagnetic defects in as-deposited and annealed samples of amorphous SiO2 produced by plasma enhanced chemical vapor deposition using tetraethoxysilane and O2. In as-deposited samples the total paramagnetic defect density is 1.7 X 10(18) cm-3 decreasing to 3 X 10(16) cm-3 after annealing for 10 min in N2 at 800-degrees-C. We identify silicon dangling bond defects (O3 = Si bullet) and, tentatively, nonbridging oxygen-hole centers (O3 = SiO bullet), O2- ions, C2H5 bullet radicals, and CO2- radicals. We observe a defect having a g factor of 2.0040 which we cannot identify.

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页码：2480 / 2484

页数：5

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