ULTRAVIOLET-INDUCED DEFECT CREATION IN AMORPHOUS SIO2 EXPOSED TO AN O2 PLASMA

被引：14

作者：

DEVINE, RAB

FRANCOU, JM

INARD, A

PELLETIER, J

机构：

[1] Centre National d'Etudes des Télécommunications, 38243 Meylan

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 16期

关键词：

D O I：

10.1063/1.103214

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The creation of paramagnetic defects in plasma chemical vapor deposited amorphous SiO2 exposed to a rf oxygen plasma has been studied as a function of exposure time for two plasma power densities. Unpaired Si dangling bond defects (oxygen-vacancy or oxygen-vacancy like) have been observed in densities attaining ∼4×1017 cm-3 after more than 20 min exposure. These defect levels are equivalent to 10 Mrad of 60 Co γ radiation. Ultraviolet photons in the wavelength range 250≤λ≤300 nm are shown to be responsible for the defect creation. The 130 nm O* emission is found not to be important.

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页码：1549 / 1551

页数：3

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