ELECTRICAL AND SPIN-RESONANCE CHARACTERISTICS OF LOW-TEMPERATURE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIO2

被引：21

作者：

DEVINE, RAB

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 10期

关键词：

D O I：

10.1063/1.343828

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4702 / 4708

页数：7

相关论文

共 22 条

[1] ARNDT J, 1969, PHYS CHEM GLASSES, V10, P117
[2] LOW-TEMPERATURE DEPOSITION OF HIGH-QUALITY SILICON DIOXIDE BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION
BATEY, J
TIERNEY, E
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) : 3136 - 3145
[3] ELECTRICAL CHARACTERISTICS OF VERY THIN SIO2 DEPOSITED AT LOW SUBSTRATE TEMPERATURES
BATEY, J
TIERNEY, E
NGUYEN, TN
[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (04) : 148 - 150
[4] CHARGE AND INTERFACE STATE GENERATION IN FIELD OXIDES
BOESCH, HE
TAYLOR, TL
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1273 - 1279
[5] PLASMA-ENHANCED GROWTH AND COMPOSITION OF SILICON OXYNITRIDE FILMS
DENISSE, CMM
TROOST, KZ
ELFERINK, JBO
HABRAKEN, FHPM
VANDEWEG, WF
HENDRIKS, M
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) : 2536 - 2542
[6] CORRELATED DEFECT CREATION AND DOSE-DEPENDENT RADIATION SENSITIVITY IN AMORPHOUS SIO2
DEVINE, RAB
ARNDT, J
[J]. PHYSICAL REVIEW B, 1989, 39 (08): : 5132 - 5138
[7] DENSIFICATION-INDUCED INFRARED AND RAMAN-SPECTRA VARIATIONS OF AMORPHOUS SIO2
DEVINE, RAB
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (06): : 3154 - 3156
[8] RADIATION-SENSITIVITY ENHANCEMENT AND ANNEALING VARIATION IN DENSIFIED, AMORPHOUS SIO2
DEVINE, RAB
[J]. PHYSICAL REVIEW B, 1987, 35 (18): : 9783 - 9789
[9] CHARGE TRAPPING STUDIES IN SIO2 USING HIGH-CURRENT INJECTION FROM SI-RICH SIO2-FILMS
DIMARIA, DJ
GHEZ, R
DONG, DW
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4830 - 4841
[10] PREPARATION AND SOME PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED SI-RICH SIO2 AND SI3N4 FILMS
DONG, D
IRENE, EA
YOUNG, DR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (05) : 819 - 823