ETCHING IN A PULSED PLASMA

[1] SOME FEATURES OF RF EXCITED FULLY IONIZED LOW-PRESSURE ARGON PLASMA [J]. PHYSICS LETTERS A, 1982, 91 (04) : 163 - 166

[2] PULSED HIGH-RATE PLASMA-ETCHING WITH VARIABLE SI/SIO2 SELECTIVITY AND VARIABLE SI ETCH PROFILES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1095 - 1097

[3] BOSWELL RW, 1984, PLASMA PHYS, V10, P1147

[4] THE REACTION OF FLUORINE-ATOMS WITH SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3633 - 3639

[5] ION-ENHANCED GAS-SURFACE CHEMISTRY - THE INFLUENCE OF THE MASS OF THE INCIDENT ION [J]. SURFACE SCIENCE, 1981, 103 (01) : 177 - 188

[6] ELECTRON AND CHEMICAL-KINETICS IN THE LOW-PRESSURE RF DISCHARGE ETCHING OF SILICON IN SF6 [J]. IEEE TRANSACTIONS ON PLASMA SCIENCE, 1986, 14 (02) : 145 - 155

[7] HETEROGENEOUS FLUORINE ATOM RECOMBINATION-REACTION ON SEVERAL MATERIALS OF CONSTRUCTION [J]. AIAA JOURNAL, 1976, 14 (05) : 644 - 647

[8] PORTEOUS RK, 1985, THESIS AUSTR NATIONA

[9] RYAN KR, COMMUNICATION

[10] WAGNER JJ, 1981, PLASMA CHEM PLASMA P, V1, P201

[1] SOME FEATURES OF RF EXCITED FULLY IONIZED LOW-PRESSURE ARGON PLASMA [J]. PHYSICS LETTERS A, 1982, 91 (04) : 163 - 166

[2] PULSED HIGH-RATE PLASMA-ETCHING WITH VARIABLE SI/SIO2 SELECTIVITY AND VARIABLE SI ETCH PROFILES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1095 - 1097

[3] BOSWELL RW, 1984, PLASMA PHYS, V10, P1147

[4] THE REACTION OF FLUORINE-ATOMS WITH SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3633 - 3639

[5] ION-ENHANCED GAS-SURFACE CHEMISTRY - THE INFLUENCE OF THE MASS OF THE INCIDENT ION [J]. SURFACE SCIENCE, 1981, 103 (01) : 177 - 188

[6] ELECTRON AND CHEMICAL-KINETICS IN THE LOW-PRESSURE RF DISCHARGE ETCHING OF SILICON IN SF6 [J]. IEEE TRANSACTIONS ON PLASMA SCIENCE, 1986, 14 (02) : 145 - 155

[7] HETEROGENEOUS FLUORINE ATOM RECOMBINATION-REACTION ON SEVERAL MATERIALS OF CONSTRUCTION [J]. AIAA JOURNAL, 1976, 14 (05) : 644 - 647

[8] PORTEOUS RK, 1985, THESIS AUSTR NATIONA

[9] RYAN KR, COMMUNICATION

[10] WAGNER JJ, 1981, PLASMA CHEM PLASMA P, V1, P201