ALXGA1-XAS BAND-EDGE DEPENDENCE ON ALLOY COMPOSITION

被引:13
作者
FU, Y
CHAO, KA
OSORIO, R
机构
[1] UNIV BRASILIA,DEPT FIS,BR-70910 BRASILIA,DF,BRAZIL
[2] UNIV BRASILIA,CTR INT FIS MAT CONDENSADA,BR-70910 BRASILIA,DF,BRAZIL
来源
PHYSICAL REVIEW B | 1989年 / 40卷 / 09期
关键词
D O I
10.1103/PhysRevB.40.6417
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:6417 / 6419
页数:3
相关论文
共 23 条
  • [1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS
    ADACHI, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : R1 - R29
  • [2] [Anonymous], ELECTRONIC STRUCTURE
  • [3] OPTICAL-PROPERTIES OF ALXGA1-XAS
    ASPNES, DE
    KELSO, SM
    LOGAN, RA
    BHAT, R
    [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) : 754 - 767
  • [4] ASPNES DE, 1977, I PHYSICS C SERIES B, V33, P111
  • [5] DIRECT-ENERGY-GAP DEPENDENCE ON AL CONCENTRATION IN ALXGA1-XAS
    BOSIO, C
    STAEHLI, JL
    GUZZI, M
    BURRI, G
    LOGAN, RA
    [J]. PHYSICAL REVIEW B, 1988, 38 (05): : 3263 - 3268
  • [6] COMPLEX BAND STRUCTURES OF ZINCBLENDE MATERIALS
    CHANG, YC
    [J]. PHYSICAL REVIEW B, 1982, 25 (02): : 605 - 619
  • [7] COMPLEX BAND STRUCTURES OF CRYSTALLINE SOLIDS - AN EIGENVALUE METHOD
    CHANG, YC
    SCHULMAN, JN
    [J]. PHYSICAL REVIEW B, 1982, 25 (06): : 3975 - 3986
  • [8] ELECTRONIC-STRUCTURE OF PSEUDOBINARY SEMICONDUCTOR ALLOYS ALXGA1-XAS,GAPXAS1-X, AND GAXIN1-XP
    CHEN, AB
    SHER, A
    [J]. PHYSICAL REVIEW B, 1981, 23 (10): : 5360 - 5374
  • [9] LONG-RANGE ORDER AND SEGREGATION IN SEMICONDUCTOR SUPERLATTICES
    CIRACI, S
    BATRA, IP
    [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (20) : 2114 - 2117
  • [10] DINGLE R, 1977, 6TH P INT S GAAS REL, V33, P210