X-RAY AND RAMAN-SCATTERING CHARACTERIZATION OF GE/SI BURIED LAYERS

被引：13

作者：

HEADRICK, RL

BARIBEAU, JM

LOCKWOOD, DJ

JACKMAN, TE

BEDZYK, MJ

机构：

[1] CORNELL UNIV,DEPT STAT & COMP SCI,ITHACA,NY 14853

[2] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 07期

关键词：

D O I：

10.1063/1.108840

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Germanium buried layers in (001) oriented silicon with thicknesses of 2-12 monolayers have been studied with synchrotron x-ray diffraction, x-ray reflectivity, and Raman scattering spectroscopy of visible light. Relaxation, strain, and intermixing have been observed via diffraction and intermixing is inferred from vibrational frequency shifts.

引用

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页码：687 / 689

页数：3

相关论文

共 12 条

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J].

ABSTREITER, G ;

BRUGGER, H ;

WOLF, T ;

JORKE, H ;

HERZOG, HJ .

PHYSICAL REVIEW LETTERS, 1985, 54 (22) :2441-2444

[2] CHARACTERIZATION OF ULTRATHIN GE EPILAYERS ON (100)-SI [J].

BARIBEAU, JM ;

LOCKWOOD, DJ ;

JACKMAN, TE ;

AEBI, P ;

TYLISZCZAK, T ;

HITCHCOCK, AP .

CANADIAN JOURNAL OF PHYSICS, 1991, 69 (3-4) :246-254

[3]

BORN M, 1989, PRINCIPLES OPTICS, P40

[4]

COWLEY JM, 1981, DIFFRACTION PHYSICS

[5]

DHARMAWARDANA MWC, 1991, LIGHT SCATTERING SEM, P81

[6]

EBERL K, 1992, HDB SEMICONDUCTORS, V3

[7] NEW OPTICAL-TRANSITIONS IN STRAINED SI-GE SUPERLATTICES [J].

FROYEN, S ;

WOOD, DM ;

ZUNGER, A .

PHYSICAL REVIEW B, 1987, 36 (08) :4547-4550

[8] STRUCTURAL AND ELECTRONIC-PROPERTIES OF EPITAXIAL THIN-LAYER SIN GEN SUPERLATTICES [J].

FROYEN, S ;

WOOD, DM ;

ZUNGER, A .

PHYSICAL REVIEW B, 1988, 37 (12) :6893-6907

[9] RAMAN-STUDY OF ORDER AND DISORDER IN SIGE ULTRATHIN SUPERLATTICES [J].

MENENDEZ, J ;

PINCZUK, A ;

BEVK, J ;

MANNAERTS, JP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1306-1309

[10] CALCULATED PHONON-SPECTRA OF SI/GE (001) SUPERLATTICES - FEATURES FOR INTERFACE CHARACTERIZATION [J].

MOLINARI, E ;

FASOLINO, A .

APPLIED PHYSICS LETTERS, 1989, 54 (13) :1220-1222