VERY-LOW ENERGY SURFACE OF SILICON

被引：8

作者：

CLARK, SJ ^{[1
]}

ACKLAND, GJ ^{[1
]}

CRAIN, J ^{[1
]}

PAYNE, MC ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.50.5728

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Depressurization of Si from its metallic beta-Sn modification results in a dense metastable form (Si-III), which is semimetallic and persists indefinitely at ambient pressure. We have investigated possible reconstructions of the Si-III (001) surface using ab initio pseudopotential calculations and find that a configuration comprised of adatoms and symmetric dimers has, to the best of our knowledge, a lower surface energy than any other previously reported surface of silicon.

引用

页码：5728 / 5731

页数：4