HIGH MOBILITY ELECTRONS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROSTRUCTURES GROWN BY MBE AND THEIR APPLICATION TO HIGH-SPEED DEVICES

被引：44

作者：

HIYAMIZU, S

MIMURA, T

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 56卷 / 02期

关键词：

D O I：

10.1016/0022-0248(82)90465-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：455 / 463

页数：9

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