LOW THRESHOLD CURRENT CW OPERATION OF GAINASP INP BURIED HETEROSTRUCTURE DISTRIBUTED BRAGG-REFLECTOR INTEGRATED-TWIN-GUIDE LASER EMITTING AT 1.5-1.6 MU-M

被引：23

作者：

TANBUNEK, T

ARAI, S

KOYAMA, F

KISHINO, K

YOSHIZAWA, S

WATANABE, T

SUEMATSU, Y

机构：

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 25-2期

关键词：

D O I：

10.1049/el:19810675

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：967 / 968

页数：2

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