NMR/NQR study of Kondo semiconductors CeNiSn and CeRhSb

被引：10

作者：

Nakamura, K. ^{[1
]}

Kitaoka, Y. ^{[1
]}

Asayama, K. ^{[1
]}

Takabatake, T. ^{[2
]}

Nakamoto, G. ^{[2
]}

Tanaka, H. ^{[2
]}

Fujii, H. ^{[2
]}

机构：

[1] Osaka Univ, Dept Mat Phys, Toyonaka, Osaka 560, Japan

[2] Hiroshima Univ, Fac Integrated Arts & Sci, Higashihiroshima 724, Japan

来源：

PHYSICA B-CONDENSED MATTER | 1995年 / 206卷 / 1-4期

关键词：

Bandwidth - Crystal lattices - Electronic density of states - Energy gap - Estimation - Fermi level - Magnetic relaxation - Mathematical models - Nuclear magnetic resonance spectroscopy - Semiconductor materials - Solid state physics - Thermal effects;

D O I：

10.1016/0921-4526(94)00598-P

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The gapped state in Kondo semiconductors CeNiSn and CeRhSb has been investigated by measurements of nuclear-spin lattice relaxation rate, 1/T-1 of Sn-119 and Sb-123 and Knight shift of Sn-119 and Sb-123. The T-dependences of T-1 and the shift in both compounds have revealed a novel feature for the gap state at low-T. Especially, the former has established that the energy gap is of a pseudo type with a V-shaped structure, where the band width, D and the pseudogap, Delta were estimated to be D = 140 and 210 K and Delta = 14 and 28 K for CeNiSn and CeRhSb, respectively. At very low-T, the T1T= constant behavior has, however, been found in both compounds. The fact that the T1T= constant behavior appears from much higher-T in CeNi1.01Sn and CeNi0.97Co0.03Sn suggest that impurities and/or imperfections yield a finite density of states at the Fermi level. Together with the Knight shift result, we highlight that the gapped state in Ce-based compounds belongs to a different class from the activated-type gap state in such as SmB6 and YbB12.

引用

页码：829 / 831

页数：3

共 11 条

[11] ANISOTROPIC SUPPRESSION OF THE ENERGY-GAP IN CENISN BY HIGH MAGNETIC-FIELDS [J].

TAKABATAKE, T ;

NAGASAWA, M ;

FUJII, H ;

KIDO, G ;

NOHARA, M ;

NISHIGORI, S ;

SUZUKI, T ;

FUJITA, T ;

HELFRICH, R ;

AHLHEIM, U ;

FRAAS, K ;

GEIBEL, C ;

STEGLICH, F .

PHYSICAL REVIEW B, 1992, 45 (10) :5740-5743

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