LOW RESISTIVITY AL-DOPED ZNS GROWN BY MOVPE

被引：40

作者：

YASUDA, T

HARA, K

KUKIMOTO, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90341-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：485 / 489

页数：5

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[1] MECHANISM OF BROAD-BAND LUMINESCENCES IN ZNS PHOSPHORS .I. SPECTRUM SHIFT DURING DECAY AND WITH EXCITATION INTENSITY
ERA, K
SHIONOYA, S
WASHIZAW.Y
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1968, 29 (10) : 1827 - &
[2] ZNS BLUE-LIGHT-EMITTING DIODES WITH AN EXTERNAL QUANTUM EFFICIENCY OF 5X10-4
KATAYAMA, H
ODA, S
KUKIMOTO, H
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (12) : 697 - 699
[3] INFRARED ABSORPTION DUE TO DONOR STATES IN ZNS CRYSTALS
KUKIMOTO, H
SHIONOYA, S
KODA, T
HIOKI, R
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1968, 29 (06) : 935 - &
[4] BLUE EMISSION FROM FORWARD-BIASED ZNS DIODES
KUKIMOTO, H
ODA, S
KATAYAMA, H
[J]. JOURNAL OF LUMINESCENCE, 1976, 12 (01) : 923 - 927
[5] MOCVD GROWTH OF ZNSXSE1-X EPITAXIAL LAYERS LATTICE-MATCHED TO GAAS USING ALKYLS OF ZN, S AND SE
MITSUHASHI, H
MITSUISHI, I
KUKIMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (11): : L864 - L866
[6] PREPARATION AND CHARACTERIZATION OF LOW-RESISTIVITY ZNS FOR BLUE LEDS
ODA, S
KUKIMOTO, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (07) : 956 - 958