THEORY OF ELECTRONIC-STRUCTURE IN SUPERLATTICES

[61] ELECTRONIC-STRUCTURE OF TYPE-I SUPERLATTICES FROM TIGHT-BINDING CALCULATIONS [J]. SUPERLATTICES AND MICROSTRUCTURES, 1986, 2 (05) : 477 - 482

[62] INAS-GASB SUPER-LATTICE ENERGY STRUCTURE AND ITS SEMICONDUCTOR-SEMI-METAL TRANSITION [J]. PHYSICAL REVIEW B, 1978, 18 (06): : 2812 - 2818

[63] ELECTRONIC-PROPERTIES OF THE (100) (SI)/(GE) STRAINED-LAYER SUPERLATTICES [J]. PHYSICAL REVIEW B, 1988, 38 (18) : 13237 - 13245

[64] ELECTRONIC PROPERTIES OF THE ALAS-GAAS (001) INTERFACE AND SUPER-LATTICE [J]. PHYSICAL REVIEW B, 1979, 19 (12): : 6341 - 6349

[65] Schultz J. J., 1985, Special Publication, International Fertilizer Development Center, P77

[66] SIMPLE CALCULATIONS OF CONFINEMENT STATES IN A QUANTUM WELL [J]. PHYSICAL REVIEW B, 1985, 31 (12): : 8041 - 8048

[67] THEORY OF VALENCE SUBBANDS IN GAAS HETEROSTRUCTURES [J]. SURFACE SCIENCE, 1986, 174 (1-3) : 105 - 110

[68] THEORIES OF ELECTRONIC-STRUCTURE IN SEMICONDUCTOR HETEROSTRUCTURES [J]. SUPERLATTICES AND MICROSTRUCTURES, 1989, 5 (03) : 335 - 340

[69] EFFECTIVE-MASS APPROXIMATION IN THE PRESENCE OF AN INTERFACE [J]. PHYSICAL REVIEW B, 1979, 20 (02): : 734 - 747

[70] PIEZOELECTRIC EFFECTS IN STRAINED-LAYER SUPERLATTICES [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2717 - 2719

[61] ELECTRONIC-STRUCTURE OF TYPE-I SUPERLATTICES FROM TIGHT-BINDING CALCULATIONS [J]. SUPERLATTICES AND MICROSTRUCTURES, 1986, 2 (05) : 477 - 482

[62] INAS-GASB SUPER-LATTICE ENERGY STRUCTURE AND ITS SEMICONDUCTOR-SEMI-METAL TRANSITION [J]. PHYSICAL REVIEW B, 1978, 18 (06): : 2812 - 2818

[63] ELECTRONIC-PROPERTIES OF THE (100) (SI)/(GE) STRAINED-LAYER SUPERLATTICES [J]. PHYSICAL REVIEW B, 1988, 38 (18) : 13237 - 13245

[64] ELECTRONIC PROPERTIES OF THE ALAS-GAAS (001) INTERFACE AND SUPER-LATTICE [J]. PHYSICAL REVIEW B, 1979, 19 (12): : 6341 - 6349

[65] Schultz J. J., 1985, Special Publication, International Fertilizer Development Center, P77

[66] SIMPLE CALCULATIONS OF CONFINEMENT STATES IN A QUANTUM WELL [J]. PHYSICAL REVIEW B, 1985, 31 (12): : 8041 - 8048

[67] THEORY OF VALENCE SUBBANDS IN GAAS HETEROSTRUCTURES [J]. SURFACE SCIENCE, 1986, 174 (1-3) : 105 - 110

[68] THEORIES OF ELECTRONIC-STRUCTURE IN SEMICONDUCTOR HETEROSTRUCTURES [J]. SUPERLATTICES AND MICROSTRUCTURES, 1989, 5 (03) : 335 - 340

[69] EFFECTIVE-MASS APPROXIMATION IN THE PRESENCE OF AN INTERFACE [J]. PHYSICAL REVIEW B, 1979, 20 (02): : 734 - 747

[70] PIEZOELECTRIC EFFECTS IN STRAINED-LAYER SUPERLATTICES [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2717 - 2719