A SELF-CONSISTENT MODEL OF MAGNETO-TUNNELING

被引：2

作者：

POTZ, W

ZHANG, J

机构：

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 12期

关键词：

D O I：

10.1016/0038-1101(89)90240-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1359 / 1363

页数：5

共 11 条

[1]

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[4]

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[6] RESONANT MAGNETOTUNNELING IN GAALAS-GAAS-GAALAS HETEROSTRUCTURES [J].

MENDEZ, EE ;

ESAKI, L ;

WANG, WI .

PHYSICAL REVIEW B, 1986, 33 (04) :2893-2896

[7] SELF-CONSISTENT ANALYSIS OF RESONANT TUNNELING CURRENT [J].

OHNISHI, H ;

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SHIBATOMI, A .

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[8] THEORETICAL-STUDY OF SUBBAND LEVELS IN SEMICONDUCTOR HETEROSTRUCTURES [J].

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[9]

POTZ W, 1989, IN PRESS J APPL PHYS

[10]

POTZ W, 1988, IN PRESS SUPERLATT M, V5

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