RESONANT TUNNELING VIA LANDAU-LEVELS IN GAAS-GA1-XALXAS HETEROSTRUCTURES

被引：27

作者：

DASILVA, CETG ^{[1
]}

MENDEZ, EE ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.38.3994

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3994 / 3997

页数：4

共 18 条

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[7] RESONANT TUNNELING IN MAGNETIC-FIELDS - EVIDENCE FOR SPACE-CHARGE BUILDUP
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[8] RESONANT TUNNELING OF TWO-DIMENSIONAL ELECTRONS THROUGH A QUANTUM WIRE - A NEGATIVE TRANSCONDUCTANCE DEVICE
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[9] TUNNELING AND PROPAGATING TRANSPORT IN GAAS-GA1-XALXAS-GAAS(100) DOUBLE HETEROJUNCTIONS
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MCGILL, TC
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 439 - 444
[10] TRANSPORT CHARACTERISTICS OF L-POINT AND GAMMA-POINT ELECTRONS THROUGH GAAS-GA1-XALXAS-GAAS(111) DOUBLE HETEROJUNCTIONS
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SMITH, DL
MCGILL, TC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 637 - 642

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