1/F NOISE-REDUCTION OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS BY CYCLING FROM INVERSION TO ACCUMULATION

被引：92

作者：

BLOOM, I

NEMIROVSKY, Y

机构：

[1] Department of Electrical Engineering, Technion-Israel Institute of Technology

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 15期

关键词：

D O I：

10.1063/1.105130

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new experimental setup for the study of 1/f noise of metal-oxide-semiconductor transistor under nonsteady state conditions is presented. The noise measurements demonstrate for the first time that, by interposing periods of negative bias corresponding to accumulation between the monitored periods of positive bias corresponding to inversion, the low-frequency noise sampled in the positive bias intervals is reduced.

引用

页码：1664 / 1666

页数：3

共 12 条

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