THE DEVELOPMENT AND APPLICATION OF A SI-SIO2 INTERFACE-TRAP MEASUREMENT SYSTEM BASED ON THE STAIRCASE CHARGE-PUMPING TECHNIQUE

被引：29

作者：

CHUNG, JE

MULLER, RS

机构：

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 10期

关键词：

D O I：

10.1016/0038-1101(89)90064-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：867 / 882

页数：16

相关论文

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