PHOTOCONDUCTIVITY IN HIGHLY TETRAHEDRAL DIAMOND-LIKE AMORPHOUS-CARBON

被引:40
作者
AMARATUNGA, GAJ [1 ]
VEERASAMY, VS [1 ]
MILNE, WI [1 ]
DAVIS, CA [1 ]
SILVA, SRP [1 ]
MACKENZIE, HS [1 ]
机构
[1] UNIV SYDNEY,SCH PHYS,SYDNEY,NSW 2006,AUSTRALIA
关键词
D O I
10.1063/1.110046
中图分类号
O59 [应用物理学];
学科分类号
摘要
A photoconductive effect is observed in tetrahedral amorphous carbon (ta-C) or amorphous diamond films with a high proportion of sp3 bonding and a structure analogous to amorphous silicon. The spectral response is shown to peak at around 750-800 nm and extend into the near UV region. The maximum photoresponse coincides with the optical absorption edge. The quantum efficiency of 300 nm thick films with interdigitated electrodes is over 10% in the wavelength range 450-800 nm.
引用
收藏
页码:370 / 372
页数:3
相关论文
共 10 条
[1]  
ANGUS JC, 1986, PLASMA DEPOSITED THI, P530
[2]  
CONNELL GAN, 1984, AMORPHOUS SEMICONDUC, V56, P61
[3]   CONDUCTION IN NON-CRYSTALLINE SYSTEMS .5. CONDUCTIVITY, OPTICAL ABSORPTION AND PHOTOCONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS [J].
DAVIS, EA ;
MOTT, NF .
PHILOSOPHICAL MAGAZINE, 1970, 22 (179) :903-&
[4]  
LAFFERTY JM, 1980, VACUUM ARCS
[5]   FILTERED ARC DEPOSITION OF AMORPHOUS DIAMOND [J].
LOSSY, R ;
PAPPAS, DL ;
ROY, RA ;
CUOMO, JJ .
APPLIED PHYSICS LETTERS, 1992, 61 (02) :171-173
[6]   COMPRESSIVE-STRESS-INDUCED FORMATION OF THIN-FILM TETRAHEDRAL AMORPHOUS-CARBON [J].
MCKENZIE, DR ;
MULLER, D ;
PAILTHORPE, BA .
PHYSICAL REVIEW LETTERS, 1991, 67 (06) :773-776
[7]  
MOTT NF, 1971, ELECTRONIC PROCESSES, P248
[8]  
Tauc J., 1974, AMORPHOUS LIQUID SEM, DOI DOI 10.1007/978-1-4615-8705-7
[9]   OPTICAL AND ELECTRONIC-PROPERTIES OF AMORPHOUS DIAMOND [J].
VEERASAMY, VS ;
AMARATUNGA, GAJ ;
MILNE, WI ;
HEWITT, P ;
FALLON, PJ ;
MCKENZIE, DR ;
DAVIS, CA .
DIAMOND AND RELATED MATERIALS, 1993, 2 (5-7) :782-787
[10]  
VEERASAMY VS, IN PRESS IEEE T PLAS