VANADIUM PHOSPHATE GLASS THRESHOLD SWITCHING DEVICES

被引：15

作者：

REGAN, M ^{[1
]}

DRAKE, CF ^{[1
]}

机构：

[1] STAND TELECOMM LABS LTD, HARLOW, ESSEX, ENGLAND

来源：

MATERIALS RESEARCH BULLETIN | 1972年 / 7卷 / 12期

关键词：

D O I：

10.1016/0025-5408(72)90194-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：1559 / 1562

页数：4

相关论文

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[3] EFFECTS OF VARIOUS DOPING ELEMENTS ON TRANSITION TEMPERATURE OF VANADIUM OXIDE SEMICONDUCTORS
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[4] OXIDES WHICH SHOW A METAL-TO-INSULATOR TRANSITION AT THE NEEL TEMPERATURE
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[J]. PHYSICAL REVIEW LETTERS, 1959, 3 (01) : 34 - 36
[5] HIGH CURRENT GLASS SWITCHES
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[J]. MATERIALS RESEARCH BULLETIN, 1971, 6 (06) : 487 - &