DIELECTRIC PROPERTIES OF FILMS FORMED BY VACUUM EVAPORATION OF SILICON MONOXIDE

被引：25

作者：

ANASTASIO, TA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 06期

关键词：

D O I：

10.1063/1.1709954

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2606 / +

页数：1

共 20 条

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[4]

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[7] ELECTRICAL CONDUCTION THROUGH SIO FILMS [J].

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[8] OPTICAL PROPERTIES OF SILICON MONOXIDE IN THE WAVELENGTH REGION FROM 0.24 TO 14.0 MICRONS [J].

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[9]

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