DETERMINATION OF BORON RANGE DISTRIBUTION IN ION-IMPLANTED SILICON BY B-10(N,ALPHA)LI-7 REACTION

被引：15

作者：

NAGY, AZ

BOGANCS, J

GYULAI, J

CSOKE, A

NAZAROV, V

SERES, Z

SZABO, A

YAZVITSKY, Y

机构：

[1] CENT RES INST PHYS,H-1525 BUDAPEST,HUNGARY

[2] DUBNA JOINT NUCL RES INST,NEUTRON PHYS LAB,DUBNA,USSR

来源：

JOURNAL OF RADIOANALYTICAL CHEMISTRY | 1977年 / 38卷 / 1-2期

关键词：

D O I：

10.1007/BF02520179

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：19 / 27

页数：9

共 12 条

[1]

BOGANCS J, 1975, ISOTOPENPRAXIS, V11, P429

[2]

BOGANCS J, 1974, P148295 JINR REPR

[3]

BRICE DK, 1975, ION IMPLANTATION RAN, V1, P569

[4]

GOLIKOV VV, 1971, JINR35736 REP

[5]

GYULAI J, UNPUBLISHED WORK

[6] MEASUREMENT OF BORON DISTRIBUTION IN B-10-IMPLANTED SILICON BY (N,ALPHA) NUCLEAR-REACTION [J].

MEZEY, G ;

SZOKEFAL.Z ;

BADINKA, C .

THIN SOLID FILMS, 1973, 19 (01) :173-175

[7]

MITCHELL IV, 1973, INT C APPLICATION NU

[8]

NAGY AZ, 1976, IZOTOPTECHNIKA BUDAP, V11

[9]

Northcliffe L. S., 1970, NUCL DATA A, V7, P233

[10]

PASZTOR E, 1976, KFKI7663 REP

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