CHANNELS AND EXCESS REVERSE CURRENT IN GROWN GERMANIUM P-N JUNCTION DIODES

被引:39
作者
MCWHORTER, AL
KINGSTON, RH
机构
来源
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1954年 / 42卷 / 09期
关键词
D O I
10.1109/JRPROC.1954.274569
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1376 / 1380
页数:5
相关论文
共 9 条
[1]  
BRATTAIN WH, 1953, AT&T TECH J, V32, P1
[2]   N-TYPE SURFACE CONDUCTIVITY ON P-TYPE GERMANIUM [J].
BROWN, WL .
PHYSICAL REVIEW, 1953, 91 (03) :518-527
[3]   SURFACE CONDUCTION CHANNEL PHENOMENA IN GERMANIUM [J].
CHRISTENSEN, H .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (09) :1371-1376
[4]  
KINGSTON RH, 1954, B AM PHYS SOC
[5]  
KINGSTON RH, 1954, PHYS REV, V93, P347
[6]   A MECHANISM FOR WATER INDUCED EXCESS REVERSE DARK CURRENT ON GROWN GERMANIUM N-P JUNCTIONS [J].
LAW, JT .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (09) :1367-1370
[7]   OBSERVATIONS OF ZENER CURRENT IN GERMANIUM P-N JUNCTIONS [J].
MCAFEE, KB ;
RYDER, EJ ;
SHOCKLEY, W ;
SPARKS, M .
PHYSICAL REVIEW, 1951, 83 (03) :650-651
[8]   ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J].
MCKAY, KG ;
MCAFEE, KB .
PHYSICAL REVIEW, 1953, 91 (05) :1079-1084
[9]  
1926, INT CRITICAL TABLES, V1, P67