X-RAY DIFFRACTION STUDY OF EPITAXIAL LAYERS OF GE AND GA AS FORMED FROM A LIQUID PHASE

被引:4
作者
CASTET, L
MAYET, L
MESNARD, G
机构
来源
REVUE DE PHYSIQUE APPLIQUEE | 1969年 / 4卷 / 03期
关键词
D O I
10.1051/rphysap:0196900403043100
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:431 / &
相关论文
共 20 条
[1]  
BLACK J, 1964, J APPL PHYS, V35, P8
[2]   ETUDE RADIOCRISTALLOGRAPHIQUE POINT PAR POINT DUNE LAME MONOCRISTALLINE DE BATIO3 PAR LA METHODE DE LAMBOT-VASSAMILLET ET INFLUENCE DU CHAMP ELECTRIQUE [J].
CASTET, L ;
MESNARD, G .
ACTA CRYSTALLOGRAPHICA, 1967, 23 :352-&
[3]  
CASTET L, 1966, THESIS LYON
[4]  
DONNELLY JP, 1956, THESIS PITTSBURGH
[5]   GROWTH OF SEMICONDUCTOR CRYSTALS FROM SOLUTION USING TWIN-PLANE REENTRANT-EDGE MECHANISM [J].
FAUST, JW ;
JOHN, HF .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (12) :1407-&
[6]  
GUINIER A, 1956, THEORIE TECHNIQUE RA, P135
[7]  
HOKI H, 1967, JAPAN J APPL PHYS, V6, P1248
[8]  
KRAUSE GO, 1967, APPL PHYS LETTERS, V10, P9
[9]   THE MEASURING OF LATTICE DISTORTIONS IN METAL SINGLE CRYSTALS [J].
LAMBOT, H ;
VASSAMILLET, L ;
DEJACE, J .
ACTA METALLURGICA, 1953, 1 (06) :711-719
[10]  
LAUGIER A, 1964, THESIS LYON