OPTICAL PROPERTIES OF SEMICONDUCTORS UNDER HYDROSTATIC PRESSURE .2. SILICON

被引：33

作者：

PAUL, W

WARSCHAUER, DM

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(58)90135-5

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：102 / 106

页数：5

共 13 条

[1] [Anonymous], PHOTOCONDUCTIVITY C
[2] THE OPTICAL CONSTANTS OF GERMANIUM IN THE INFRA-RED AND VISIBLE
BRATTAIN, WH
BRIGGS, HB
[J]. PHYSICAL REVIEW, 1949, 75 (11): : 1705 - 1710
[3] INFRA-RED ABSORPTION IN SILICON
BRIGGS, HB
[J]. PHYSICAL REVIEW, 1950, 77 (05): : 727 - 728
[4] BROOKS H, 1955, ADV ELECTRONICS ELEC, V7
[5] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K
DASH, WC
NEWMAN, R
[J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155
[6] INFRARED ABSORPTION OF SILICON NEAR THE LATTICE EDGE
MACFARLANE, GG
ROBERTS, V
[J]. PHYSICAL REVIEW, 1955, 98 (06): : 1865 - 1866
[7] Moss T. S., 1952, PHOTOCONDUCTIVITY EL
[8] NATHAN MI, 1957, B AM PHYS SOC, V2, P134
[9] NEURINGER L, 1957, B AM PHYS SOC, V2, P134
[10] PRESSURE DEPENDENCE OF THE RESISTIVITY OF SILICON
PAUL, W
PEARSON, GL
[J]. PHYSICAL REVIEW, 1955, 98 (06): : 1755 - 1757