DESIGN AND PERFORMANCE OF DIGITAL POLYSILICON THIN-FILM-TRANSISTOR CIRCUITS ON GLASS

被引:16
作者
FLUXMAN, SM
机构
[1] GEC-Marconi Ltd, Borehamwood
来源
IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 1994年 / 141卷 / 01期
关键词
TRANSISTORS; THIN-FILM CIRCUITS; DIGITAL CIRCUITS; POLYSILICON; LIQUID-CRYSTAL DISPLAYS; CHEMICAL VAPOR DEPOSITION;
D O I
10.1049/ip-cds:19949947
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Digital circuits, for a fully integrated active matrix liquid-crystal display (LCD) have been designed and fabricated with a low-temperature polysilicon thin-film-transistor process. Measurements of the CMOS inverters, static and dynamic shift registers, line memory latches and output drivers for the display are presented. A comparison is made of the results of measurement and simulation of the circuits using a thin-film-transistor-circuit model developed for the SPICE program. The model was used for the display circuit optimisation. The fully integrated active matrix LCD is also described.
引用
收藏
页码:56 / 59
页数:4
相关论文
共 8 条
[1]   SILICON-ON-INSULATOR APPROACH FOR POWER ICS INTEGRATING VERTICAL DMOS AND POLYCRYSTALLINE-SILICON CMOS THIN-FILM TRANSISTORS [J].
DOLNY, GM ;
IPRI, AC ;
NOSTRAND, GE ;
WHEATLEY, CF ;
WODARCZYK, PJ .
IEEE ELECTRON DEVICE LETTERS, 1992, 13 (10) :516-518
[2]  
FLUXMAN SM, 1992, 12TH P INT DISPL RES, P888
[3]  
HAWS SA, 1993, SID93, P895
[4]   A UNIFIED CIRCUIT MODEL FOR THE POLYSILICON THIN-FILM TRANSISTOR [J].
IZZARD, MJ ;
MIGLIORATO, P ;
MILNE, WI .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (2A) :L170-L171
[5]   LASER REPAIR OF ACTIVE MATRIX DISPLAY DRIVE CIRCUITS [J].
KOLINSKY, PV ;
FLUXMAN, SM ;
KING, RA ;
WOOD, RM ;
WHITEHOUSE, CS ;
LOWE, AJ .
ELECTRONICS LETTERS, 1992, 28 (24) :2202-2204
[6]   CHARACTERISTICS AND 3-DIMENSIONAL INTEGRATION OF MOSFETS IN SMALL-GRAIN LPCVD POLYCRYSTALLINE SILICON [J].
MALHI, SDS ;
SHICHIJO, H ;
BANERJEE, SK ;
SUNDARESAN, R ;
ELAHY, M ;
POLLACK, GP ;
RICHARDSON, WF ;
SHAH, AH ;
HITE, LR ;
WOMACK, RH ;
CHATTERJEE, PK ;
LAM, HW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :258-281
[7]  
Morozumi S., 1983, SID 83, P156
[8]  
Morozumi S, 1984, SID 84 DIG, P316