SILICON-ON-INSULATOR APPROACH FOR POWER ICS INTEGRATING VERTICAL DMOS AND POLYCRYSTALLINE-SILICON CMOS THIN-FILM TRANSISTORS

被引:4
作者
DOLNY, GM [1 ]
IPRI, AC [1 ]
NOSTRAND, GE [1 ]
WHEATLEY, CF [1 ]
WODARCZYK, PJ [1 ]
机构
[1] HARRIS SEMICOND INC,MOUNTAINTOP,PA 18707
关键词
D O I
10.1109/55.192819
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes a novel approach for the monolithic integration of low-voltage logic and analog control circuits with vertical-current flow power transistors. This is achieved by fabricating a CMOS device family, using polycrystalline-silicon thin-film transistors (TFT's), on the field oxide of a single-crystal power device. Parasitic interactions between the control and power devices are eliminated in a simple, inexpensive, and easily manufacturable process. The technology is capable of supporting both MOS and bipolar power devices and the presence of the TFT control circuits places no restriction on the maximum voltage or current of the power device. The TFT's exhibit good electrical characteristics and the power devices are not compromised by the addition of the TFT control circuits. This concept is demonstrated by the fabrication of a vertical DMOS power transistor with > 100-V, > 45-A capability, monolithically integrated with current-limiting and temperature-limiting functions.
引用
收藏
页码:516 / 518
页数:3
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