1ST-PRINCIPLES CALCULATIONS OF MULTIPLET STRUCTURES OF TRANSITION-METAL DEEP IMPURITIES IN II-VI AND III-V SEMICONDUCTORS

被引：53

作者：

WATANABE, S

KAMIMURA, H

机构：

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 3卷 / 03期

关键词：

D O I：

10.1016/0921-5107(89)90027-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：313 / 324

页数：12

共 47 条

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