ACCEPTOR-DEFECT COMPLEXES IN GAAS STUDIED BY PERTURBED ANGULAR-CORRELATION SPECTROSCOPY

被引：15

作者：

BAURICHTER, A ^{[1
]}

DEICHER, M ^{[1
]}

DEUBLER, S ^{[1
]}

FORKEL, D ^{[1
]}

PLANK, H ^{[1
]}

WOLF, H ^{[1
]}

WITTHUHN, W ^{[1
]}

机构：

[1] CERN,ISOLDE COLLABORAT,CH-1211 GENEVA,SWITZERLAND

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 22期

关键词：

D O I：

10.1063/1.102044

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2301 / 2303

页数：3

共 17 条

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[2]

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[3]

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[6]

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[7] HYDROGENATION AND SUBSEQUENT HYDROGEN ANNEALING OF GAAS ON SI [J].

HSIEH, KC ;

FENG, MS ;

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ITO, CR ;

FENG, M .

APPLIED PHYSICS LETTERS, 1989, 54 (04) :341-343

[8]

PAJOT B, 1989, I PHYS C SER, V95, P437

[9]

PEARTON SJ, 1987, I PHYSICS C SERIES, V83, P289

[10] SHALLOW IMPURITY NEUTRALIZATION IN GAP BY ATOMIC-HYDROGEN [J].

SINGH, M ;

WEBER, J .

APPLIED PHYSICS LETTERS, 1989, 54 (05) :424-426

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